Strain Measurement

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What is strain?

When we  applied a force on  object or material  at  rest, the the deformation occurs and the length of the material will change(∆L).the strain is noted by 

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Wire wound strain gauge

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Wirewound strain gauge There are two types of wirewound strain gauge  bonded and unbonded. Bonded strain gauge It consists of specimen surface  Gauge is directly bonded with the surface of the specimen  surface being tested. The thin layer of adhesive cement is also there this cement is  not only serve to transmit the strain from the specimen to the gauge wire but also act as an insulator. Depending upon the application the bonded strain gauge have various structure so we can use this structure as our application. Unbonded strain gauge These strain gauges are not directly bonded onto the surface of the structure under study. Hence they are termed as unbounded strain gauges. Description of the Unbonded Strain gauges: The arrangement of an unbonded strain gauges consists of the following. Two frames P and Q carrying rigidly fixed insulated pins as shown in diagram. these two frames can move relative with respect to each other and they are ...
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SemiConductor type strain gauge

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Semiconductor type strain gauge In this type of strain gauge we use doped silicon or  germanium as a sensing element. When we apply stress to this type of material its Resistance is changed, by measuring the  resistance change we can  measure the stress applied on this material. Gauge factor of this type of strain gauge is well around 100. Unlike other strain gauges, semiconductor strain gages are based upon the piezoresistive effects of silicon or germanium and measure the change in resistance with stress as opposed to strain. The semiconductor bonded strain gage is a wafer with the resistance element diffused into a substrate of silicon. No backing is provided for the wafer element and bonding it to the strained surface needs extra care since only a thin layer of epoxy is used to attach it. Size of a semiconductor strain gauge is much smaller and the cost much lower than for a metallic foil sensor.
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Do an ALP to compare two eight bit numbers NUM1 and NUM2 stored  in external memory locations 8000h and 8001h respectively. Reflect your  result as: If NUM1<NUM2, SET LSB of data RAM location 2FH (bit  address 78H). If NUM1>NUM2, SET MSB of location 2FH (bit address  7FH). If NUM1 = NUM2, then Clear both LSB & MSB of bit addressable  ORG 0000H MOV DPTR,#8000H MOVX A,@DPTR MOV B,A INC DPTR MOVX A,@DPTR CJNE A,B,TARGET CLR 7FH CLR 78H SJMP BACK TARGET: JC NEXT SETB 78H SJMP BACK NEXT: SETB 7FH BACK: END
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