What is pressure ?

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Do an ALP to compare two eight bit numbers NUM1 and NUM2 stored in external memory locations 8000h and 8001h respectively. Reflect your result as: If NUM1NUM2, SET MSB of location 2FH (bit address 7FH). If NUM1 = NUM2, then Clear both LSB & MSB of bit addressable memory location 2FH.

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Do an ALP to compare two eight bit numbers NUM1 and NUM2 stored  in external memory locations 8000h and 8001h respectively. Reflect your  result as: If NUM1<NUM2, SET LSB of data RAM location 2FH (bit  address 78H). If NUM1>NUM2, SET MSB of location 2FH (bit address  7FH). If NUM1 = NUM2, then Clear both LSB & MSB of bit addressable  ORG 0000H MOV DPTR,#8000H MOVX A,@DPTR MOV B,A INC DPTR MOVX A,@DPTR CJNE A,B,TARGET CLR 7FH CLR 78H SJMP BACK TARGET: JC NEXT SETB 78H SJMP BACK NEXT: SETB 7FH BACK: END
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SemiConductor type strain gauge

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Semiconductor type strain gauge In this type of strain gauge we use doped silicon or  germanium as a sensing element. When we apply stress to this type of material its Resistance is changed, by measuring the  resistance change we can  measure the stress applied on this material. Gauge factor of this type of strain gauge is well around 100. Unlike other strain gauges, semiconductor strain gages are based upon the piezoresistive effects of silicon or germanium and measure the change in resistance with stress as opposed to strain. The semiconductor bonded strain gage is a wafer with the resistance element diffused into a substrate of silicon. No backing is provided for the wafer element and bonding it to the strained surface needs extra care since only a thin layer of epoxy is used to attach it. Size of a semiconductor strain gauge is much smaller and the cost much lower than for a metallic foil sensor.
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